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參數(shù)資料
| 型號： | 2SK2907-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 100K |
| 代理商： | 2SK2907-01R |
3
2SK2907-01R
FUJI POWER MOSFET
-50
0
50
100
150
0
5
10
15
20
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=50A,VGS=10V
R
]
Tch [°C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C
VDS [V]
Ciss
Coss
Crss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
40
60
80
100
120
140
160
180
200
220
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80μs pulse test,Tch=25°C
10V
5V
VGS=0V
I
VSD [V]
0
50
100
150
200
250
300
0
5
10
15
20
25
12V
30V
Vcc=48V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25°C
0
10
20
30
40
50
V
V
Qg [nC]
VGS
VDS
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
10
4
t
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2907 | N-channel MOS-FET |
| 2SK2907-01 | N-channel MOS-FET |
| 2SK2908-01L | N-channel MOS-FET |
| 2SK2908-01S | N-channel MOS-FET |
| 2SK2914 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2907-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK2912L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
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