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參數(shù)資料
| 型號(hào)： | 2SK2910 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 800MA I(D) | SOT-23VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 800mA的一（d）|的SOT - 23VAR |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SK2910 |
2SK2957(L),2SK2957(S)
4
0.5
0.4
0.3
0.2
0.1
0
48
12
16
20
1
10
100
250
100
20
50
10
5
20
16
12
8
4
–40
0
40
80
120
160
0
0.1 0.2
1
2
10
5
1
2
0.5
20
5
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
V
= 4 V
GS
10 V
5 ,10, 20 A
20
50
Pulse Test
R
(m
)
W
DS(on)
Pulse Test
I
= 20 A
D
10 A
5 A
500
200
V
= 4 V
GS
10 V
Pulse Test
I
= 5, 10, 20 A
D
0.5
5
25 °C
Tc = –25 °C
75 °C
V
= 10 V
Pulse Test
DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK291P | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-92 |
| 2SK291Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK291R | TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92 |
| 2SK291S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK291T | TRANSISTOR | JFET | N-CHANNEL | 36MA I(DSS) | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2912L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
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