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參數(shù)資料
| 型號(hào)： | 2SK2912S-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 76K |
| 代理商： | 2SK2912S-E |
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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2912S | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2912STL-E | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK291PRF | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291TRF | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291QRR | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
| 2SK2915 | 功能描述:MOSFET N-CH 600V 16A TO-3PN RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2915(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3PN Bulk |
| 2SK2915(Q,T) | 功能描述:MOSFET MOSFET N-Ch 600V 16A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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