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參數(shù)資料
| 型號(hào)： | 2SK2912STL-E |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 109K |
| 代理商： | 2SK2912STL-E |
2SK2912(L), 2SK2912(S)
Rev.2.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
100
75
50
25
0
50
100
150
200
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
12
34
5
Tc = 75
°C
25
°C
–25
°C
50
40
30
20
10
0
24
6
8
10
3.5 V
4 V
VGS = 3 V
1000
300
100
30
10
3
1
0.3
0.1
Ta = 25
°C
10 V
6 V
4.5 V
Pulse Test
VDS = 10 V
Pulse Test
10
s
100
s
1 ms
PW
=
10
m
s (1shot)
DC
Operation
(Tc
=
25
C)
10
s
100
s
1 ms
PW
=
10
m
s (1shot)
DC
Operation
(Tc
=
25
°C)
Operation in
this area is
limited by RDS(on)
2.0
1.6
1.2
0.8
0.4
0
48
12
16
20
1
10
100
250
0.5
0.2
0.1
0.02
0.05
0.01
0.005
20
5
ID = 50 A
10 A
20 A
VGS = 4 V
10 V
Pulse Test
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