參數(shù)資料
型號: 2SK2912STL-E
元件分類: JFETs
英文描述: 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-83, LDPAK-3
文件頁數(shù): 8/11頁
文件大小: 109K
代理商: 2SK2912STL-E
2SK2912(L), 2SK2912(S)
Rev.2.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
0.05
0.04
0.03
0.02
0.01
–40
0
40
80
120
160
0
1
2
5
10
20
50
100
50
10
20
2
5
1
ID = 20 A
VGS = 4 V
10 V
10 A
10, 20 A
50 A
Pulse Test
25
°C
Tc = –25
°C
75
°C
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
010
20
30
40
50
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
20
40
60
80
100
0
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
1000
500
100
200
20
50
10
ID = 40 A
VGS
VDS
VDD = 50 V
25 V
10 V
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 10 V
25 V
50 V
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
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