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參數(shù)資料
| 型號： | 2SK291 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 硅N溝道結(jié)場效應(yīng)管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 34K |
| 代理商： | 2SK291 |
2SK291
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
V
GSO
I
D
I
G
Pch
–15
V
Gate to source voltage
–15
V
Drain current
50
mA
Gate current
5
mA
Channel power dissipation
300
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–15
—
—
V
I
G
= –100
μ
A
Gate to source breakdown
voltage
V
(BR)GSO
–15
—
—
V
I
G
= –100
μ
A
Gate cutoff current
I
GSS
I
DSS
*
1
V
GS(off)
|y
fs
|
Ciss
—
—
10
nA
V
GS
= –7 V, V
DS
= 0
V
DS
= 5 V, V
GS
= 0
V
DS
= 5 V, I
D
= 100
μ
A
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
nV/
√
Hz
V
= 5 V, I
D
= 5 mA, Rg = 0,
f = 100 kHz
Drain current
5
—
50
mA
Gate to source cutoff voltage
—
—
–3.0
V
Forward transfer admittance
25
45
—
mS
Input capacitance
—
8.5
—
pF
Noise voltage referred to input
e
n
—
1.2
—
Note:
Grade
1. The 2SK291 is grouped by I
DSS
as follows.
P
Q
R
S
T
I
DSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
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