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參數(shù)資料
| 型號： | 2SK291 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 硅N溝道結(jié)場效應(yīng)管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SK291 |
2SK291
3
Maximum Channel Power
Dissipation Curve
Ambient Temperature Ta (
°
C)
C
c
300
450
150
0
50
100
150
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
D
D
V
DS
= 5 V
V
GS
= 0 V
–0.1
30
20
10
0
2
4
6
–0.2
–0.3
–0.4
–0.5
–0.6
–0.8
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
D
D
30
20
10
0
–2.0
–1.2
–1.6
–0.8
0
–0.4
V
DS
= 5 V
Forward Transfer Admittance vs.
Drain to Source Voltage
Gate to Source Voltage V
GS
(V)
F
y
f
60
50
40
30
20
10
0
–2.0
–1.2
–1.6
–0.8
0
–0.4
V
= 5 V
f = 1 kHz
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