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參數(shù)資料
| 型號(hào)： | 2SK2973 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | RF POWER MOS FET(VHF/UHF power amplifiers) |
| 中文描述： | 射頻功率MOS FET（甚高頻/超高頻功率放大器） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK2973 |
2SK2973
MITSUBISHI RF POWER MOS FET
Nov. ′97
P
O
, add, t VS. V
DD
DRAIN SUPPLY VOLTAGE V
DD
(V)
3
10
18
16
34
32
13
10
4
30
28
26
24
22
20
14
12
5
6
7
12
35
P
O
η
add
I
DS
VS. V
GS
V
GS
(V)
0.0
1.0
2.0
3.0
5.0
0.2
0.4
0.6
1.2
4.0
0.8
0.0
0.5
1.5
2.5
3.5
4.5
1.0
TYPICAL PERFORMANCE DATA
39mm
1mm
3mm
4.5mm
8mm
4mm
37mm
C2
GR40-220
22pF
L1
3Turns AWG#31,
φ
0.8
Enameled wire(mm)
R1
CR10-103
10000
R2
CR10-101
100
C6
GR40-102
1000pF
C1
GR40-102
1000pF
3Turns AWG#31,
φ
0.8
Enameled wire(mm)
C10
GR40-100
10pF
C11
GR40-102
1000pF
L2
5Turns AWG#26,
φ
1.1
Enameled wire(mm)
OUTPUT
V
DD
C7
GR40-10
10pF
C8
GR40-102
1000pF
C9
22 μF 50V
C3
GR40-10
10pF
C4
GR40-102
1000pF
C5
22 μF 50V
INPUT
Note: Board material-glass epoxi substrate
micro strip line width=1mm,
ε
r :4.8,t=0.6mm
V
GG
EQUIVALENT CIRCUIT
@V
DD
=9.6V Match
I
DS
VS. V
DS
V
DS
(V)
0
2
4
6
10
0.2
0.4
0.6
1.2
8
0.8
0.0
1
3
5
7
9
T
C
=25C
1.0
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
GS
=2.0V
P
O
, add VS. Pin
INPUT POWER Pin (dBm)
0
10
8
6
4
2
34
32
30
14
20
16
14
12
10
20
18
0
26
28
26
24
22
2
4
6
8
12
16 18
22 24
20
15
10
5
85
80
75
40
35
30
25
50
45
0
70
65
60
55
P
O
η
add
V
DS
=9.6V
T
C
=25C
8
9
11
40
45
50
55
60
65
70
75
80
85
90
95
L3
η
t
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