參數(shù)資料
型號(hào): 2SK2980ZZ-TL-E
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SC-59A, MPAK-3
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 107K
代理商: 2SK2980ZZ-TL-E
2SK2980
Rev.4.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Ambient Temperature Ta (
°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.1
1
10
1.0
0.8
0.6
0.4
0.2
0
2
468
10
1.0
0.8
0.6
0.4
0.2
0
12
34
5
1.6
1.2
0.8
0.4
0
50
100
150
200
4 V
3
1
0.3
0.1
0.03
0.01
0.3
3
30
10
30
100
Ta = 25
°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
2.5 V
VGS = 1.5 V
2 V
1.8 V
Tc = –25
°C
75
°C
25
°C
VDS = 10 V
Pulse Test
Operation in
this area is
limited by RDS(on)
Test condition :
When using alumina ceramic board
(12.5 x 20 x 0.7 mm)
DC
Operation
Pulse Test
0.5
0.4
0.3
0.2
0.1
0
24
6
810
0.5 A
0.2 A
ID = 1 A
2
1
0.2
0.5
0.1
0.05
0.1
0.2
0.5
1
2
5
VGS = 2.5 V
4 V
Pulse Test
相關(guān)PDF資料
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2SK2981-Z 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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