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參數(shù)資料
| 型號： | 2SK2980ZZ-TL-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SC-59A, MPAK-3 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 2SK2980ZZ-TL-E |
2SK2980
Rev.4.00 Sep 07, 2005 page 4 of 6
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
5
2
1
0.2
0.5
0.1
0.05
0.01 0.02
0.05 0.1
0.2
0.5
ID = 0.1 A, 0.2 A, 0.5 A
VGS = 2.5 V
4 V
0.1 A, 0.2 A, 0.5 A
1
25
°C
Tc = –25
°C
75
°C
Case Temperature
Tc
(
°C)
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|(S)
Forward Transfer Admittance vs.
Drain Current
Pulse Test
VDS = 10 V
Pulse Test
010
20
30
40
50
200
500
100
10
20
50
200
100
20
50
2
5
1
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
5
1000
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
50
40
30
20
10
0
20
16
12
8
4
246
8
10
0
VDD = 20 V
10 V
5 V
ID = 1 A
VGS
VDS
V
= 5 V
10 V
20 V
DD
0.1
0.2
0.5
1
2
5
10
tf
tr
td(on)
td(off)
VGS = 4 V, VDD = 10 V
PW = 2
s, duty < 1 %
VGS = 0
5 V
Capacitance
C
(pF)
Drain to Source Voltage VDS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
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| 2SK2989(F,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 5A TO-92 |
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