參數(shù)資料
型號: 2SK3000
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET Low Frequency Power Switching
中文描述: 硅?通道場效應(yīng)晶體管低頻功率開關(guān)
文件頁數(shù): 2/8頁
文件大?。?/td> 47K
代理商: 2SK3000
2SK3000
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
40
V
Gate to source voltage
±
10
V
Drain current
1.0
A
Drain peak current
Note1
4.0
A
Reverse drain current
1.0
A
Channel dissipation
400
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm
t
)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
40
60
V
I
D
= 100
μ
A, V
GS
= 0
Drain to source voltage
V
DS(SUS)
V
(BR)GSS
40
V
L = 100
μ
H, I
D
= 3 A
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source breakdown
voltage
±
10
V
Zero gate voltege drain current I
DSS
Gate to source leak current
1.0
μ
A
μ
A
V
DS
= 40 V, V
GS
= 0
V
GS
=
±
6.5V, V
DS
= 0
I
D
= 10
μ
A, V
DS
= 5V
I
D
= 450 mA
V
GS
= 4V
Note3
I
D
= 450 mA
V
GS
= 10V
Note3
I
D
= 450 mA
V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
GSS
±
5
Gate to source cutoff voltage V
GS(off)
Static drain to source on state
resistance
1.1
2.1
V
R
DS(on)
0.3
0.5
Static drain to source on state
resistance
R
DS(on)
0.25
0.3
Forward transfer admittance
|y
fs
|
0.5
1.2
S
Input capacitance
Ciss
14.0
pF
Output capacitance
Coss
68
pF
Reverse transfer capacitance Crss
3.0
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
0.12
μ
s
μ
s
μ
s
μ
s
V
GS
= 4V, I
D
= 450 mA
R
L
= 22
Rise time
0.6
Turn-off delay time
1.7
Fall time
Note:
1.4
3. Pulse test
4. Marking is “ZY”.
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