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參數(shù)資料
| 型號(hào)： | 2SK3000 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Low Frequency Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管低頻功率開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK3000 |
2SK3000
3
Main Characteristics
1
10
50
0
2
4
6
8
10
0
1
2
3
4
5
0.8
0.6
0.4
0.2
0
50
100
150
200
5
2
1
0.2
0.1
0.5
0.02
0.01
0.05
0.05
0.2
0.5
2
5
20
Tc = –25°C
125°C
25°C
100 200
50 μs
01m
1ms
10ms
Ta = 25 °C
Noe5
limited by R
DS(on)
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
Typical Transfer Characteristics
V = 5 V
Pulse Test
Operation in
this area is
D
D
5.0
4.0
3.0
2.0
1.0
10
1
100m
10m
1m
5 V
V = 2.5 V
6 V
4.5 V
10 V
4 V
3 V
3.5 V
Pulse Test
100μ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3001 | GaAs HEMT Low Noise Amplifier |
| 2SK303 | Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 2SK304 | Low-Frequency Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 2SK3053 | Switching N-channel power MOS FET industrial use |
| 2SK3054 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3000ZY(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3000ZY-90TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3000ZY-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3001 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:GaAs HEMT Low Noise Amplifier |
| 2SK3002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET |
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