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參數(shù)資料
| 型號(hào)： | 2SK303-5 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場(chǎng)效應(yīng)| N溝道| 30V的五（巴西）直| 5mA的我（直）|對(duì)236AB |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK303-5 |
Datasheet Title
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note3
50
A
Avalanche energy
E
AR
Note3
333
mJ
Channel dissipation
Pch Note
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相關(guān)PDF資料 |
PDF描述 |
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| 2SK304C | TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 600UA I(DSS) | SPAK |
| 2SK304D | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK304E | TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 2.5MA I(DSS) | SPAK |
| 2SK304F | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3056-Z | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3035(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK303500L | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3036 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3037 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3037(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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