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參數(shù)資料
| 型號： | 2SK303V2 |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 150K |
| 代理商： | 2SK303V2 |
UTC2SK303
JFET
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R206-071,A
2
Drain Current, IDSS (mA)
5
D
rain-to-S
ource
O
N
R
e
sistance,
R
DS
(O
N)
(
)
3
7
2
RDS(ON) - IDSS
57 1.0
5
10
3
VGS = 0
7
3
7
VDS = 10mV
2
1000
100
80
Ambient Temperature, Ta ( )
℃
160
A
llow
able
P
o
w
e
rD
issipation,
PD
(mW)
120
0
240
PD - Ta
20
40
100 120
160
0
80
140
60
200
40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK303 | 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3068(2-10S1B) | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3070STL-E | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3076(L) | 0.9 ohm, POWER, FET |
| 2SK3076(L) | 0.9 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK304 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency Amp Applications |
| 2SK3042 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3043 | 功能描述:MOSFET N-CH 450V 5A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3044 | 功能描述:MOSFET N-CH 450V 7A TO-220D RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3045 | 功能描述:MOSFET N-CH 500V 2.5A TO-220D RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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