參數(shù)資料
型號: 2SK304D
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場效應(yīng)| N溝道| 30V的五(巴西)直| 1.2MA我(直)| SPAK
文件頁數(shù): 5/10頁
文件大?。?/td> 54K
代理商: 2SK304D
Datasheet Title
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
V
= 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相關(guān)PDF資料
PDF描述
2SK304E TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 2.5MA I(DSS) | SPAK
2SK304F Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK3056-Z TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-263AB
2SK3058-Z Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK3060 2SK3060 Data Sheet | Data Sheet[04/2001]
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK304E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 2.5MA I(DSS) | SPAK
2SK304F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 5MA I(DSS) | SPAK
2SK3050 制造商:ROHM 制造商全稱:Rohm 功能描述:10V Drive Nch MOS FET
2SK3050_1 制造商:ROHM 制造商全稱:Rohm 功能描述:10V Drive Nch MOS FET
2SK3050TL 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube