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參數(shù)資料
| 型號： | 2SK3070(L) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 54K |
| 代理商： | 2SK3070(L) |
Datasheet Title
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note3
50
A
Avalanche energy
E
AR
Note3
333
mJ
Channel dissipation
Pch Note
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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相關代理商/技術參數(shù) |
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| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3072 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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