參數(shù)資料
型號(hào): 2SK3225-AZ
元件分類: 小信號(hào)晶體管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封裝: MP-3, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 403K
代理商: 2SK3225-AZ
1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3225
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13798EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
# shows major revised points.
DESCRIPTION
The 2SK3225 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state Resistance
RDS(on)1 = 18 m
MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 27 m
MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20,
10
V
Drain Current (DC)
ID(DC)
±34
A
Drain Current (Pulse)
Note1
ID(pulse)
±136
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
22
mJ
Note1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V
, RG = 25 , VGS = 20 V → 0 V
.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3225
TO-251
2SK3225-Z
TO-252
(TO-251)
(TO-252)
#
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相關(guān)代理商/技術(shù)參數(shù)
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