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參數(shù)資料
| 型號： | 2SK312 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 12A條（?。﹟至3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK312 |
2SK3134(L),2SK3134(S)
6
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
50
40
30
20
10
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
300
20
1
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 75 A
D
VGS
VDS
V
= 20 V
10 V
5 V
DD
0.5
5
V
= 20 V
10 V
5 V
DD
500
50
V
= 10 V, V
= 10 V
PW = 5
s, duty < 1 %
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3123 | |
| 2SK313 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK315E | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK315F | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3120 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3121 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3122 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3123 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK3124 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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