參數(shù)資料
型號: 2SK313
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| N溝道| 450V五(巴西)直| 12A條(?。﹟至3
文件頁數(shù): 1/12頁
文件大?。?/td> 61K
代理商: 2SK313
2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-721B (Z)
3rd. Edition
Feb. 1999
Features
Low on-resistance
R
DS(on) =4m typ.
Low drive current
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關(guān)PDF資料
PDF描述
2SK315E Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK315F TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK
2SK315G Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK317 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK318 TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3130 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type
2SK3130(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220
2SK3130_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type
2SK3130_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications
2SK3131 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件