參數(shù)資料
型號: 2SK3135(S)
元件分類: JFETs
英文描述: 0.012 ohm, POWER, FET
封裝: LDPAK-3
文件頁數(shù): 5/10頁
文件大小: 53K
代理商: 2SK3135(S)
2SK3135(L),2SK3135(S)
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
V
= 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相關(guān)PDF資料
PDF描述
2SC4548E2-TD 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
2SC4548D2 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
2SD1246-U 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1475F 0.4 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N3395TRD 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3135STL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3136 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3136-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3140(E) 制造商:Renesas Electronics Corporation 功能描述: