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參數(shù)資料
| 型號(hào)： | 2SK3135(S) |
| 元件分類： | JFETs |
| 英文描述： | 0.012 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SK3135(S) |
2SK3135(L),2SK3135(S)
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
V
= 10 V
GS
4 V
Pulse Test
2.0
1.6
1.2
0.8
0.4
Pulse Test
I
= 50 A
D
20 A
10 A
1
20
100
2
100
2
5
1
10
200
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I
= 50 A
D
10 A
20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25
°C
75
°C
25
°C
V
= 10 V
Pulse Test
DS
50
5
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
R
(m
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3135STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3136 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3136-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3140(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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