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參數(shù)資料
| 型號(hào)： | 2SK315G |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應(yīng)| N溝道| 10mA的我（直）| SPAK |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK315G |
2SK3134(L),2SK3134(S)
7
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
(V)
SDF
Reverse
Drain
Current
I
(A)
F
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V
= 0, –5 V
GS
10 V
5 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
Avalanche Test Circuit
Avalanche Waveform
200
160
120
80
40
25
50
75
100
125
150
0
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
= 35 A
V
= 15 V
duty < 0.1 %
Rg > 50
AP
DD
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PDF描述 |
|---|---|
| 2SK317 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK318 | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
| 2SK3199 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3200 | MOSFET |
| 2SK3203(L).2SK3203(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK316 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3160 | 制造商:Hitachi 功能描述:Silicon N Channel High Speed Power Switching Mosfet - 200V 10A 30W |
| 2SK3160-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,10A,0.13ohm,TO-220FM |
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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