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參數(shù)資料
| 型號(hào)： | 2SK315G |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場(chǎng)效應(yīng)| N溝道| 10mA的我（直）| SPAK |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 61K |
| 代理商： | 2SK315G |
2SK3134(L),2SK3134(S)
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
V
= 10 V
GS
4 V
Pulse Test
R
(m
)
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
0.3
1
0.1
10
1000
10
3
10, 20, 50 A
I
= 50 A
D
30
300
V
= 4 V
GS
10 V
Pulse Test
10, 20 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
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PDF描述 |
|---|---|
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| 2SK3199 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3200 | MOSFET |
| 2SK3203(L).2SK3203(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK316 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3160 | 制造商:Hitachi 功能描述:Silicon N Channel High Speed Power Switching Mosfet - 200V 10A 30W |
| 2SK3160-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,10A,0.13ohm,TO-220FM |
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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