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參數(shù)資料
| 型號(hào)： | 2SK3210(S) |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK3210(S) |
2SK3210(L),2SK3210(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
150
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 150 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state
R
DS(on)
—
4045m
I
D = 15A, VGS = 10V*
4
resistance
R
DS(on)
—
4563m
I
D = 15A, VGS = 4V*
4
Forward transfer admittance
|y
fs|
1830—
S
I
D = 15A, VDS = 10V*
4
Input capacitance
Ciss
—
2600
—
pF
V
DS = 10V
Output capacitance
Coss
—
820
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
350
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
25
—
ns
I
D = 15A, VGS = 10V
Rise time
t
r
—
180
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
600
—
ns
Fall time
t
f
—
280
—
ns
Body–drain diode forward voltage
V
DF
—
0.91
—
V
I
F = 30A, VGS = 0
Body–drain diode reverse recovery
time
t
rr
—
110
—
ns
I
F = 30A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3211(L) | |
| 2SK3211(S) | |
| 2SK3274(L) | |
| 2SK3274(S) | |
| 2SK3418-E | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3210S-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3210STL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR |
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