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參數(shù)資料
| 型號(hào)： | 2SK3211(S) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK3211(S) |
2SK3210(L),2SK3210(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
150
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)*
1
120
A
Body-drain diode reverse drain current
I
DR
30
A
Avalanche current
I
AP*
3
30
A
Avalanche energy
E
AR*
3
67
mJ
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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| 2SK3211STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3212-E | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK3215 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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