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參數(shù)資料
| 型號(hào)： | 2SK3274L-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2SK3274L-E |
2SK3274 (L), 2SK3274 (S)
Rev.3.00 May 15, 2006 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID (pulse)
Note 1
120
A
Body-drain diode reverse drain current
IDR
30
A
Avalanche current
IAP
Note 3
20
A
Avalanche energy
EAR
Note 3
40
mJ
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
30
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
±0.1
A
VGS =
±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.5
—
3.0
V
VDS = 10 V, ID = 1 mA
Note 4
Forward transfer admittance
|yfs|
18
30
—
S
ID = 15 A, VDS = 10 V
Note 4
RDS (on)
—
10
13
m
ID = 15 A, VGS = 10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
20
30
m
ID = 15 A, VGS = 4.5 V
Note 4
Input capacitance
Ciss
—
1500
—
pF
Output capacitance
Coss
—
500
—
pF
Reverse transfer capacitance
Crss
—
250
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
27
—
nC
Gate to source charge
Qgs
—
6
—
nC
Gate to drain charge
Qgd
—
5
—
nC
VDD = 10 V
VGS = 10 V
ID = 30 A
Turn-on delay time
td (on)
—
22
—
ns
Rise time
tr
—
170
—
ns
Turn-off delay time
td (off)
—
110
—
ns
Fall time
tf
—
145
—
ns
VGS = 10 V
ID = 15 A
RL = 2
Body-drain diode forward voltage
VDF
—
1.0
—
V
IF = 30 A, VGS = 0
Body-drain diode reverse recovery time
trr
—
35
—
ns
IF = 30 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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