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參數(shù)資料
| 型號(hào)： | 2SK3296-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 422K |
| 代理商： | 2SK3296-ZK |
Data Sheet D14063EJ2V0DS
2
2SK3296
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 18 A
9.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
8.5
12
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
12
19
m
Input Capacitance
C
iss
V
DS
= 10 V
1300
pF
Output Capacitance
C
oss
V
GS
= 0 V
570
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
300
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V , I
D
= 18 A
70
ns
Rise Time
t
r
V
GS(on)
= 10 V
1220
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
100
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
= 16 V
30
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
4.5
nC
Gate to Drain Charge
Q
GD
I
D
= 35 A
8.0
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 35 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 35 A, V
GS
= 0 V
35
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
23
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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