參數(shù)資料
型號(hào): 2SK3304
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁數(shù): 2/8頁
文件大小: 67K
代理商: 2SK3304
Data Sheet D13992EJ1V0DS00
2
2SK3304
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 900 V, V
GS
= 0 V
100
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 20 V, I
D
= 4.0 A
2.5
4.7
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A
1.6
2.0
Input Capacitance
C
iss
1300
pF
Output Capacitance
C
oss
240
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
55
pF
Turn-on Delay Time
t
d(on)
20
ns
Rise Time
t
r
44
ns
Turn-off Delay Time
t
d(off)
73
ns
Fall Time
t
f
V
DD
= 150 V
I
D
= 4.0 A
V
GS(on)
= 10 V
R
G
= 10
,
R
L
36
45
ns
Total Gate Charge
Q
G
44
nC
Gate to Source Charge
Q
GS
6
nC
Gate to Drain Charge
Q
GD
V
DD
= 450 V
V
GS
= 10 V
I
D
= 7.0 A
28
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 7.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
2.4
μ
s
Reverse Recovery Charge
Q
rr
I
F
= 7.0 A, V
GS
= 0 V
di/dt = 50 A/
μ
s
13.5
μ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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