參數(shù)資料
型號: 2SK3325-ZJ
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 2/8頁
文件大?。?/td> 77K
代理商: 2SK3325-ZJ
Data Sheet D14264EJ1V0DS00
2
2SK3325
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 500
V, V
GS
= 0
V
100
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30
V, V
DS
= 0
V
±
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
2.0
4.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 5.0
A
0.68
0.85
Input Capacitance
C
iss
1200
pF
Output Capacitance
C
oss
190
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
10
pF
Turn-on Delay Time
t
d(on)
21
ns
Rise Time
t
r
11
ns
Turn-off Delay Time
t
d(off)
40
ns
Fall Time
t
f
V
DD
= 150
V, I
D
= 5.0
A, V
GS(on)
= 10
V,
R
G
= 10
,
R
L
= 60
9.5
ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
6.5
nC
Gate to Drain Charge
Q
GD
V
DD
= 400
V, V
GS
= 10
V, I
D
= 10
A
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
0.5
μ
s
Reverse Recovery Charge
Q
rr
I
F
= 10
A, V
GS
= 0
V, di/dt = 50
A
/
μ
s
2.6
μ
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
1 %
τ
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
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