參數(shù)資料
型號(hào): 2SK3366-Z
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 72K
代理商: 2SK3366-Z
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14256EJ1V0DS00 (1st edition)
August 1999 NS CP(K)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3366
TO-251
2SK3366-Z
TO-252
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
R
DS(on)1
= 21 m
(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 33 m
(MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 43 m
(MAX.) (V
GS
= 4.0 V, I
D
= 10 A)
Low C
iss
: C
iss
= 730 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note
I
D(DC)
±20
A
I
D(pulse)
±80
A
Total Power Dissipation (T
C
= 25 °C)
P
T
30
W
Total Power Dissipation (T
A
= 25 °C)
P
T
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Note
PW
10
μ
s, Duty cycle
1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
R
th(ch-C)
R
th(ch-A)
4.17
125
°C/W
°C/W
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參數(shù)描述
2SK3366-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 30V 20A 21m@10V TO252 Bulk
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