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參數(shù)資料
| 型號(hào)： | 2SK3374 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（π- MOSV） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 227K |
| 代理商： | 2SK3374 |
2SK3374
2002-08-09
5
r
th
t
w
Safe operating area
E
AS
T
ch
Pulse width t
w
(S)
Channel temperature (initial) Tch (°C)
N
r
A
A
D
D
15
V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
25
V
DD
90 V, L 203 mH
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
0.001
0.1
1
3
0.3
0.01
10
100
1 m
10 m
1
10
100
T
PDM
t
Duty t/T
Rth (ch-a) 96.1°C/W
Duty 0.5
0.1
Single Pulse
0.02
0.0005
0.003
0.03
0.05
0.5
100 m
0.01
0.05
0.2
0.001
0.1
0.01
0.1
1
10
10
100
1000
*
:
Single nonrepetitive pulse
Ta 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed)
*
100 s
*
DC operation
Ta 25°C
1 ms
*
VDSS max
1
0
25
30
60
90
150
120
50
75
100
125
150
Drain-source voltage V
DS
(V)
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