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參數(shù)資料
| 型號： | 2SK3391JXTL-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SC-62, UPAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | 2SK3391JXTL-E |
2SK3391
REJ03G0209-0300 Rev.3.00 Nov 08, 2007
Page 2 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
10
A
VDS = 13.7 V, VGS = 0
Gate to source leak current
IGSS
—
±5
A
VGS = ±10 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
2.3
—
3.1
V
VDS = 13.7 V, ID = 1 mA
Input capacitance
Ciss
—
10
—
pF
VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
—
3.5
—
pF
VDS = 13.7 V, VGS = 0, f = 1 MHz
Output Power
Pout
1.6
—
W
Added Efficiency
ηadd
58
—
%
VDS = 13.7 V, IDQ = 150 mA
f = 836 MHz, Pin = 25.1 mW
Main Characteristics
0
50
100
150
200
0.8
234567
0.01
1
0.3
0.03
0.1
0.03
0.1
0.3
1
0.01
0.6
0.4
0.2
0.0
0.001 0.003
0.001
0.003
VDS = 13.7 V
Pulse Test
Tc = - 25°C
25°C
75°C
1.5
010
1
0.5
2468
8
6
4
2
VDS = 13.7 V
Pulse Test
Tc = 75°C
25°C
- 25°C
VGS = 4 V
6 V
5 V
8 V
10 V
7 V
Pulse Test
Channel
Power
Dissipation
Pch
(W)
Case Temperature Tc (°C)
Maximum Channel Power
Dissipation Curve
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
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