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參數(shù)資料
| 型號： | 2SK3391JXTL-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SC-62, UPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | 2SK3391JXTL-E |
2SK3391
REJ03G0209-0300 Rev.3.00 Nov 08, 2007
Page 3 of 9
9
8.5
-10
- 6
- 2
2
610
VDS = 0
f = 1 MHz
9.5
10
10.5
3.6
3.2
2.8
2.4
2.0
1.6
- 25
0
25
50
75
100
125
VDS = 13.7 V
10 mA
ID = 0.1
mA
1 mA
1
3
10
30
1
10
100
30
3
0.1
0.3
VGS = 0
f = 1 MHz
1
3
10
30
1
0.3
10
0.1
3
0.1
0.3
VGS = 0
f = 1 MHz
040
30
20
10
0
50
2.5
2
1
0.5
0
1.5
0.1
0.03
0.3
1
0.01
0.03
0.1
0.3
1
0.001
0.003
VGS = 10 V
Pulse Test
Tc = - 25
°C
25
°C
75
°C
VDS = 13.7 V
IDQ = 150 mA
f = 836 MHz
Pout
ηadd
Drain Current ID (A)
Drain to Source Saturatioin Voltage vs.
Drain Current
Input Capacitance vs.
Gate to Source Voltage
V
DS(sat)
(V)
Drain
to
Source
Saturation
Voltage
Input
Capacitance
Ciss
(pF)
Gate to Source Voltage VGS (V)
Ambient Temperature Ta (
°C)
Gate
to
Source
Cutoff
Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
V
GS(off)
(V)
Output Capacitance vs.
Drain to Source Voltage
Output
Capacitance
Coss
(pF)
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Votage
Drain to Gate Voltege VDG (V)
Reverse
Transfer
Capacitance
Crss
(pF)
Added
Efficiency
η
add
(%)
Input power Pin (mW)
Output Power, Added Efficiency vs.
Input Power
Output
Power
Pout
(W)
100
80
40
20
60
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