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參數資料
| 型號： | 2SK3404 |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 2SK3404 |
Data Sheet D14638EJ2V0DS
2
2SK3404
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 20 A
8.0
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 20 A
11
14
m
RDS(on)2
VGS = 4.5 V, ID = 20 A
15
21
m
Input Capacitance
Ciss
VDS = 10 V
1400
pF
Output Capacitance
Coss
VGS = 0 V
410
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
VDD = 15 V , ID = 20 A
20
ns
Rise Time
tr
VGS(on) = 10 V
9
ns
Turn-off Delay Time
td(off)
RG = 10
50
ns
Fall Time
tf
14
ns
Total Gate Charge
QG
VDD = 24 V
25
nC
Gate to Source Charge
QGS
VGS = 10 V
5.0
nC
Gate to Drain Charge
QGD
ID = 40 A
7.0
nC
Diode Forward Voltage
VF(S-D)
IF = 40 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 40 A, VGS = 0 V
31
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
28
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS
10%
90%
10%
0
VDS
90%
td(on)
tr
td(off)
tf
τ
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3404-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 40A 3-Pin(3+Tab) TO-220AB |
| 2SK3404-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3404-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 40A 14m@10V TO220SMD Cut Tape |
| 2SK3404-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3404-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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