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參數(shù)資料
| 型號： | 2SK3407 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 2SK3407 |
2SK3407
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
3.4
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.48
0.65
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
3.5
7.5
S
Input capacitance
Ciss
1400
Reverse transfer capacitance
Crss
240
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
590
pF
Rise time
tr
35
Turn-on time
ton
50
Fall time
tf
80
Switching time
Turn-off time
toff
260
ns
Total gate charge
(gate-source plus gate-drain)
Qg
35
Gate-source charge
Qgs
19
Gate-drain “miller” charge
Qgd
VDD 360 V, VGS = 10 V, ID = 10 A
16
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
280
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2.7
μC
Marking
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 40 Ω
VDD 200 V
ID = 5 A
VOUT
50
Ω
Lot No.
Note 4
K3407
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3407(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK3407(F,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 450V, 10A - Rail/Tube |
| 2SK3407_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3408 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3408(0)-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET - Bulk |
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