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參數(shù)資料
| 型號： | 2SK3418-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 117K |
| 代理商： | 2SK3418-E |
2SK3418
Rev.2.00 Sep. 10, 2004 page 3 of 7
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
2
468
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operat
ion
(Tc
=
25
°C
)
PW
=
10ms
(1
shot)
3 V
40
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = – 25
°C
25
°C
75
°C
V
= 10 V
Pulse Test
DS
Pulse Test
V
= 10 V
GS
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
0
48
12
16
20
0.5
0.4
0.3
0.2
0.1
Pulse Test
I = 50 A
D
20 A
10 A
1
30
100
3
100
0.3
1
0.1
10
1000
10
3
30
300
V
= 4 V
GS
10 V
Pulse Test
Drain Current
ID (A)
Drain
to
Source
On
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Drain Current
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain
to
Source
Voltage
V
DS(on)
(mV)
Operation in
this area is
limited by RDS(on)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3419 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3424 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3424-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) TO-220AB Bulk |
| 2SK3424-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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