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參數(shù)資料
| 型號： | 2SK3418-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK3418-E |
2SK3418
Rev.2.00 Sep. 10, 2004 page 4 of 7
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = – 25
°C
75
°C
25
°C
V
= 10 V
Pulse Test
DS
Case Temperature
Tc
(
°C)
Drain
to
Source
On
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
|yfs|
(S)
20
16
12
8
4
–50
0
50
100
150
200
0
V
= 10 V
GS
4 V
10, 20, 50 A
I = 50 A
D
10, 20 A
Pulse Test
0.1
0.3
1
3
10
30
100
010
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
300
20
1
100
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 85 A
D
VGS
VDS
V
= 50 V
25 V
10 V
DS
0.5
5
V
= 50 V
25 V
10 V
DS
500
50
GS
DD
V
= 10 V, V
= 30 V
PW = 5
s, duty < 1 %
r
t
d(on)
t
d(off)
t
tf
30000
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
trr
(ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
Switching
Time
t
(ns)
Drain Current
ID (A)
Switching Characteristics
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相關代理商/技術參數(shù) |
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|---|---|
| 2SK3419 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3424 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3424-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) TO-220AB Bulk |
| 2SK3424-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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