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參數(shù)資料
| 型號(hào)： | 2SK3461STL-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 1408K |
| 代理商： | 2SK3461STL-E |
2SK3461(L), 2SK3461(S)
Rev.3.00 May 15, 2006 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
Drain peak current
ID (pulse)
Note 1
340
A
Body-drain diode reverse drain current
IDR
85
A
Avalanche current
IAP
Note 3
60
A
Avalanche energy
EAR
Note 3
308
mJ
Channel dissipation
Pch
Note 2
110
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Ta = 25
°C
3. Value at Tch = 25°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
60
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
±0.1
A
VGS =
±20 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
Note 4
Forward transfer admittance
|yfs|
55
90
—
S
ID = 45 A, VDS = 10 V
Note 4
RDS (on)
—
4.3
5.5
m
ID = 45 A, VGS = 10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
6.0
9.0
m
ID = 45 A, VGS = 4 V
Note 4
Input capacitance
Ciss
—
9770
—
pF
Output capacitance
Coss
—
1340
—
pF
Reverse transfer capacitance
Crss
—
470
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
180
—
nC
Gate to source charge
Qgs
—
32
—
nC
Gate to drain charge
Qgd
—
36
—
nC
VDD = 50 V
VGS = 10 V
ID = 85 A
Turn-on delay time
td (on)
—
53
—
ns
Rise time
tr
—
320
—
ns
Turn-off delay time
td (off)
—
700
—
ns
Fall time
tf
—
380
—
ns
VGS = 10 V
ID = 45 A
RL = 0.67
Body-drain diode forward voltage
VDF
—
1.0
—
V
IF = 85 A, VGS = 0
Body-drain diode reverse recovery time
trr
—
70
—
ns
IF = 85 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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