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參數(shù)資料
| 型號(hào)： | 2SK3461STL-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 1408K |
| 代理商： | 2SK3461STL-E |
2SK3461(L), 2SK3461(S)
Rev.3.00 May 15, 2006 page 4 of 8
20
4
8
12
16
–50
0
50
100
150
200
0
0.1
0.3
3
10
30
100
500
200
50
10
100
20
5
1
2
0.5
1
10 A, 20 A
ID = 50 A
10 A, 20 A, 50 A
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
transfer
admittance
|y
fs
|
(S)
VDS = 10 V
Pulse Test
Case Temperature
Tc (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1
0.3
1
10
3
30100
1000
200
500
100
20
50
10
0
10
20
30
40
50
30000
10000
1000
3000
100
80
60
40
0
20
80
160
240
320
400
0
8
20
4
16
12
1000
500
200
10
50
20
100
0.1
0.5
0.2
2
1
10 20
50
5
100
300
100
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 85 A
VDS
VGS
VDD = 50 V
25 V
10 V
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance
C
(pF)
Drain to Source Voltage
VDS (V)
Switching
Time
t
(ns)
Drain Current
ID (A)
Switching Characteristics
Gate Charge
Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
VDD = 50 V
25 V
10 V
VGS = 4 V
VGS = 10 V, VDD = 30 V
PW = 5
s, duty ≤ 1 %
25°C
75°C
Tc = –25°C
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