參數(shù)資料
型號: 2SK3479-Z
元件分類: JFETs
英文描述: 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-25Z, TO-220SMD, 3 PIN
文件頁數(shù): 7/10頁
文件大小: 207K
代理商: 2SK3479-Z
Data Sheet D15077EJ1V0DS
4
2SK3479
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
12
34
5
6
VDS = 10 V
10
1
0.1
100
1000
TA =
40C
25C
75C
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
2
3
4
1
Pulsed
VGS =10 V
4.5 V
300
250
200
150
100
50
0
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
TA = 150C
75C
25C
40C
VDS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
510
15
20
Pulsed
20
16
12
8
4
0
42 A
ID = 83 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
50
40
30
20
10
0
100
1000
Pulsed
VGS = 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
2.5
3.0
50
0
50
100
150
0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3479-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Bulk 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,83A,8.8m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(2+Tab) TO-220 SMD
2SK3479-Z-E1-AZ 功能描述:MOSFET 100V N-CH TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3479-Z-E2-AZ 功能描述:MOSFET 100V N-CH TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3479-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3479-ZJ-E1-A 制造商:Renesas Electronics Corporation 功能描述: