參數(shù)資料
型號(hào): 2SK3479-Z
元件分類: JFETs
英文描述: 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-25Z, TO-220SMD, 3 PIN
文件頁數(shù): 8/10頁
文件大?。?/td> 207K
代理商: 2SK3479-Z
Data Sheet D15077EJ1V0DS
5
2SK3479
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
25
20
15
10
5
0
10 V
VGS = 4.5 V
Pulsed
ID = 42 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
VGS = 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
50
100
150
200
250
160
120
80
40
0
VDS
VGS
VDD = 80 V
50 V
20 V
ID = 83 A
16
12
8
4
0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD = 50 V
VGS = 10 V
RG = 0
相關(guān)PDF資料
PDF描述
2SK3480-Z 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3480 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3481-AZ 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3481-ZJ-AZ 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3481 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3479-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Bulk 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,83A,8.8m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(2+Tab) TO-220 SMD
2SK3479-Z-E1-AZ 功能描述:MOSFET 100V N-CH TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3479-Z-E2-AZ 功能描述:MOSFET 100V N-CH TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3479-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3479-ZJ-E1-A 制造商:Renesas Electronics Corporation 功能描述: