- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33500 > 2SK3482-Z 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB PDF資料下載
參數(shù)資料
| 型號： | 2SK3482-Z |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 2SK3482-Z |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15064EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 33 m
MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 39 m
MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 3600 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±36
A
Drain Current (Pulse)
Note1
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT
50
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
30
A
Single Avalanche Energy
Note2
EAS
90
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25
, VGS = 20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3482
TO-251 (MP-3)
2SK3482-Z
TO-252 (MP-3Z)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3482-Z-AZ | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3482-Z-AZ | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3482-Z | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3483 | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3483-Z | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3482-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 100V 36A 33m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 |
| 2SK3482-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 T/R |
| 2SK3482-Z-E2-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3483 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3483-AZ | 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。