參數(shù)資料
型號(hào): 2SK3482-Z
元件分類: 小信號(hào)晶體管
英文描述: 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封裝: TO-252, MP-3Z, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 165K
代理商: 2SK3482-Z
Data Sheet
D15064EJ2V0DS
3
2SK3482
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING
FACTOR
OF
FORWARD
BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T-
Total
Power
Di
ss
ip
ation
-
W
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
10
1
0.1
100
0.1
1000
1
10
100
TC = 25C
Single Pulse
1000
R
DS(on)
Limited
(at
V
GS
=
10
V)
ID(pulse) = 100 A
ID(DC) = 36 A
Po
wer
Dissipation
Limited
DC
PW
=
10
s
100
s
1
ms
10
ms
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
°C/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Channel to Ambient
Channel to Case
Rth(ch-A) = 125C/W
Rth(ch-C) = 2.5C/W
PW - Pulse Width - s
相關(guān)PDF資料
PDF描述
2SK3482-Z-AZ 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3482-Z-AZ 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3482-Z 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3483 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3483-Z 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3482-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 100V 36A 33m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252
2SK3482-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 T/R
2SK3482-Z-E2-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3483 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SK3483-AZ 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件