參數(shù)資料
型號(hào)： 2SK3483-Z
元件分類： 小信號(hào)晶體管
英文描述： 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝： TO-252, MP-3Z, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 116K
代理商： 2SK3483-Z
Data Sheet D15068EJ3V0DS
2
2SK3483
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 14 A
9.0
18
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 14 A
41
52
m
Ω
RDS(on)2
VGS = 4.5 V, ID = 14 A
45
59
m
Ω
Input Capacitance
Ciss
VDS = 10 V
2300
pF
Output Capacitance
Coss
VGS = 0 V
230
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 14 A
12
ns
Rise Time
tr
VGS = 10 V
9
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
53
ns
Fall Time
tf
5
ns
Total Gate Charge
QG
VDD = 80 V
49
nC
Gate to Source Charge
QGS
VGS = 10 V
7
nC
Gate to Drain Charge
QGD
ID = 28 A
13
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 28 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 28 A, VGS = 0 V
73
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
175
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
相關(guān)PDF資料
PDF描述
2SK3484-AZ 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3484-Z-AZ 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3484 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3484-AZ 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3491TP-FA 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3483-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-252
2SK3483-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3483-Z-E2-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3484 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3484-AZ 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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