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| 型號(hào)： | 2SK3498(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7B1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 198K |
| 代理商： | 2SK3498(2-7B1B) |
2SK3498
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)
High forward transfer admittance: |Yfs| = 0.6 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 400 V)
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
400
V
Drain-gate voltage (RGS = 20 k)
VDGR
400
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
1
Drain current
Pulse (Note 1)
IDP
3
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
113
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 ,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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