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參數(shù)資料
| 型號： | 2SK3499 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-9F1C, 4 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 178K |
| 代理商： | 2SK3499 |
2SK3499
2010-04-13
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature
Tc (°C)
RDS (ON) Tc
Drain-
sou
rce
on-
re
sis
tan
ce
R
DS
(ON)
(
Ω
)
Drain-source voltage VDS (V)
IDR VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc (°C)
Vth Tc
Case temperature
Tc (°C)
PD Tc
Drain-
sou
rce
volt
ag
e
V
DS
(V)
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
5
1
3
2
4
0
80
0
40
80
120
160
40
Common source
VDS = 10 V
ID = 1 mA
pulse test
0.1
100
0.3
3
30
0.2
0
1.2
0.6
0.4
0.8
1.0
10
5
1
VGS = 0, 1 V
10
1
Common source
Tc
= 25°C
pulse test
3
0
2.5
0.5
1.5
1.0
2.0
40
80
160
0
40
80
0
40
80
160
0
40
80
2.5
ID = 10 A
5
Common source
VGS = 10 V
pulse test
100
300
1000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS
= 0 V
f
= 1 MHz
Tc
= 25°C
10
30
500
3000
0.3 0.5
3
5
30 50
5000
50
20
4
12
8
16
0
100
20
60
40
80
0
80
120
160
200
40
500
100
300
200
400
0
40
60
80
100
20
Common source
ID = 10 A
Tc
= 25°C
pulse test
320
VDD = 80 V
VGS
VDS
20
4
12
8
16
0
160
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3499_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SK3499_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications |
| 2SK350 | 制造商:HITACHI 功能描述: |
| 2SK3501-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.58Ohm;ID +/-12A;TO-220AB;PD 195W;VGS +/-3 |
| 2SK3501-01SC | 制造商:Fuji Electric 功能描述: |
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