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參數(shù)資料
| 型號(hào)： | 2SK3526-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | 2SK3526-01S |
2
Characteristics
2SK3526-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80s Pulse test,Tch=25°C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80s Pulse test, Tch=25°C
02468
10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
8
10
12
14
16
18
20V
10V
8V
7.5V
7.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=6.5V
01234
5
6789
10
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
0
2
4
6
8
1012
14
1618
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
RDS(on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on)
[
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
0
255075
100
125
150
0
50
100
150
200
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
°C]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
| 2SK3527-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3528-01R | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V |
| 2SK3528-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3529-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- |
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