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參數(shù)資料
| 型號： | 2SK3549-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 122K |
| 代理商： | 2SK3549-01 |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900
VDSX *5
900
Continuous drain current
ID
±10
Pulsed drain current
ID(puls]
±40
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
10
Maximum Avalanche Energy
EAS
*1
330
Maximum Drain-Source dV/dt
dVDS/dt *4
40
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
2.50
Tc=25°C
270
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3549-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=5A
VGS=10V
ID=5A
VDS=25V
VCC=600V ID=5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
50.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=10A
VGS=10V
L=6.06mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
900
3.0
5.0
25
250
100
1.08
1.40
612
1250
1900
160
240
12
18
26
39
23
35
60
90
17
26
34.5
52
5
7.5
12
18
10
0.90
1.50
3.1
17.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
200401
*4 VDS 900V
*5 VGS=-30V
<
=
*1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
11.6±0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3549-01SC | 制造商:Fuji Electric 功能描述: |
| 2sk3550-01rsc | 制造商:Fuji Electric 功能描述: |
| 2SK3554-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 75 Milliohms;ID +/-37A;TO-220AB;PD 270W;-55 |
| 2SK3554-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3555-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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