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參數(shù)資料
| 型號(hào)： | 2SK3568 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 229K |
| 代理商： | 2SK3568 |
2SK3568
2005-01-11
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)
High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
12
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
48
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
364
mJ
Avalanche current
IAR
12
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, IAR = 12 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3568(Q) | 功能描述:MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3568(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3568(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3568(STA4,X,S) | 制造商:Toshiba 功能描述:TRANSISTOR(Halogen free) |
| 2SK3568STA4QM | 制造商:Toshiba America Electronic Components 功能描述:N-CH MOS TYPE 500V 12A RDS=0.4OHM |
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