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參數(shù)資料
| 型號： | 2SK3568 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 229K |
| 代理商： | 2SK3568 |
2SK3568
2005-01-11
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 500 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.4
0.52
Forward transfer admittance
Yfs
VDS = 10 V, ID = 6 A
3.5
8.5
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
22
Turn-on time
ton
50
Fall time
tf
36
Switching time
Turn-off time
toff
170
ns
Total gate charge
Qg
42
Gate-source charge
Qgs
23
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 12 A
19
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
12
A
Pulse drain reverse current
(Note 1)
IDRP
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1200
ns
Reverse recovery charge
Qrr
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/s
16
C
Marking
RL =
33
0 V
10 V
VGS
VDD 200 V
ID = 6 A
VOUT
50
Duty <= 1%, tw = 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3568
Part No. (or abbreviation code)
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| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3572-ZK | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3568(Q) | 功能描述:MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3568(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3568(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3568(STA4,X,S) | 制造商:Toshiba 功能描述:TRANSISTOR(Halogen free) |
| 2SK3568STA4QM | 制造商:Toshiba America Electronic Components 功能描述:N-CH MOS TYPE 500V 12A RDS=0.4OHM |
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